Institute of Microengineering and Nanoelectronics

 Institute of Microengineering and Nanoelectronics

Dr. Abdul Rahman Mohmad

staff rahman

Research Fellow / Senior Lecturer

Phone. +603 89118558
E-Mail: armohmad@ukm.edu.my
Google Scholar Profile
SCOPUS Profile

VACANCY:

I have one MSc/PhD vacancy to work on the development of 2D materials. Monthly allowance is RM2,000 – RM2500/month. Please email me for more details.

 

RESEARCH INTEREST:

• Synthesis and applications of 2-dimensional (2D) materials
• Chemical vapor deposition of layered transition metal dichalcogenides (TMDs)
• Growth and characterization of semiconductor materials and devices

 

EDUCATION:

PhD (Semiconductor materials and devices), University of Sheffield
MEng (Microelectronics), University of Sheffield

 

PROFESSIONAL EXPERIENCE:

Post-doctoral associates, Rutgers University, USA, 2016-2018
Visiting scholar, University of Sheffield, UK, Aug – Nov 2014

 

RESEARCH HIGHLIGHT:

The first Malaysian to publish as a first author in the prestigious journal Nature Materials. Nature Materials is the best journal (rank no. 1) in Physical Chemistry and Applied Physics with impact factor of 38.9. The title of the article is “Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”. In this article, Dr. Abdul Rahman reported a low cost catalyst which is capable of generating current density as high as platinum. This work has the potential to reduce cost of producing hydrogen making it commercially attractive.

“Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”, Nature Materials 18, 1309 (2019)

 

APPEARANCE IN MEDIA:

  1. New Straits Times, “Paper on hydrogen production by UKM lecturer makes top journal”, 25 Sept. 2019
  2. Utusan Malaysia, “Artikel saintis UKM dalam jurnal tersohor”, 19 Sept. 2019
  3. Berita Harian, “UKM muncul saintis pertama pengarang jurnal Nature Materials”, 5 Sept. 2019
  4. BERNAMA radio interview for The Skillz slot on “Penyelidik bertaraf global”, 5 Feb 2020

 

RESEARCH GRANTS (Total = RM2.5 million, head of research grant = 7)

  1. GUP, 1/11/2024 – 30/10/2026, RM70,000 (project leader)
  2. Dana UKM, 1/4/2023 – 30/3/2025, RM100,000 (project leader)
  3. FRGS, 1/10/2023 – 30/09/2026, RM151,260 (project leader)
  4. GUP, 1/9/2021 – 30/8/2023, RM70,000 (project leader)
  5. DIP, 1/10/2019 – 30/9/2021, RM100,000 (co-investigator)
  6. FRGS, 1/9/2019 – 30/11/2021, RM97,000 (project leader)
  7. FRGS, 1/9/2019 – 30/11/2021, RM125,000 (co-investigator)
  8. FRGS, 1/1/2019 – 31/3/2021, RM56,200 (co-investigator)
  9. GUP, 15/8/2018 – 14/11/2020, RM68,000 (project leader)
  10. FRGS, 15/08/2017 – 14/01/2020, RM 81,000 (co-investigator)
  11. MRUN, 01/10/2015 – 30/09/2018, RM 124,000 (co-investigator)
  12. TOP DOWN, 01/06/2015 – 31/05/2018, RM300,000 (co-investigator)
  13. LAUREATE, 01/01/2014 – 31/12/2015, RM 500,000 (co-investigator)
  14. GGPM, 01/08/2014 – 31/07/2016, RM 40,000 (project leader)
  15. ICONIC, 01/01/2014 – 31/12/2016, RM421,400 (co-investigator)

 

SELECTED JOURNAL PUBLICATIONS:

  1. H. Abdullah, M. Sundararaj, V. Selvanathan, N. Mohammad Naim, Md Akhtaruzzaman, M. H. D. Othman, W. F. Yap, A. R. Mohmad, N. J. Azman, Md F. Ahmad, J. Sampe, B. Yuliarto, “The effect of deposition time on the morphology of CuS electrodes fabricated by chemical bath deposition for supercapacitor applications” Applied Physics A 130, 834 (2024)
  2. A. R. Mohmad, H. Abdullah, K. Kido, H. Hasebe, R. Du, M. Mesuda, T. Suemasu, “Investigation of defects in BaSi2 thin film on Si prepared by co-sputtering technique” Journal of Luminescence 275, 120797 (2024).
  3. H. Abdullah, K. J. Xian, M. N. Amir Hamzah, N. Mohammad Naim, B. Bais, A. R. Mohmad, J. Sampe, B. Yuliarto, M. H. D. Othman, Y. W. Fen, N. L. W. Septiani, ‘”Investigating the potential of cobalt-doped zinc oxide (Zn1-xCoxOδ) as a buffer layer for CZTS thin-film solar cells” Journal of Materials Science: Materials in Electronics 35, 1 (2024)
  4. K V Y Jie, M F Ahmad, A R Mohmad, A M Ismail, M N Norizan, M M Ramli, S Shaari, Y Sulaiman, SAA Rais, S Johari, “Visible Light-Assisted Charge Extraction in High-Band-Gap SrTiO3 through the Integration of a Triplet Sensitizer–Emitter Thin Film” ACS Applied Energy Materials 7, 779 (2024)
  5. M. H. Johari, M. S. Sirat, M. A. Mohamed, A. F. Mustaffa, A. R. Mohmad, “Computational Fluid Dynamics Insights into Chemical Vapor Deposition of Homogeneous MoS2 Film with Solid Precursors” Crystal Research and Technology 58, 2300139 (2023)
  6. Z Batool, K Hild, I Marko, A R Mohmad, J P R David, X Lu, T Tiedje, S J Sweeney, “Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures” Journal of Materials Science: Materials in Electronics 34, 480 (2023)
  7. M. S. Sirat, M. H. Johari, A. R. Mohmad, M. A. S. Mohammad Haniff, M. H. Ani, M. R. Mat Hussin, M. A. Mohamed “Direct growth and properties of few-layer MoS2 on multilayer graphene prepared by chemical vapor deposition, ” Journal of Materials Science 57, 19704 (2022)
  8. A. R. Mohmad, Z. Xu, Y. Yamashita, T. Suemasu, “Assessing defect-assisted emissions in indirect bandgap BaSi2 by photoluminescence, ” Journal of Luminescence 252, 119312 (2022).
  9. M. S. Sirat, M. H. Johari, A. R. Mohmad, M. A. S. Mohammad Haniff, M. H. Ani, M. I. Syono, M. A. Mohamed, “Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition, ” Thin Solid Films 744, 139092 (2022)
  10. R. D. Richards, N. J. Bailey, Y. Liu, T. B. O. Rockett, A. R. Mohmad, “GaAsBi: From Molecular Beam Epitaxy Growth to Devices, ” Physica Status Solidi (b) 259, 2100330 (2022)
  11. A. R. Mohmad, A. A. Hamzah, J. Yang, Y. Wang, I. Bozkurt, H. S. Shin, H. Y. Jeong, M. Chhowalla, “Synthesis of metallic mixed 3R and 2H Nb(1+x)S2 nanoflakes by chemical vapor deposition“, Faraday Discussion 227, 332 (2021)
  12. M. H. Johari, M. S. Sirat, M. A. Mohamed, Y. Wakayama, A. R. Mohmad, “Effects of post-annealing on MoS2 thin films synthesized by multi-step chemical vapor deposition”, Nanomaterials and Nanotechnology 11, 305710 (2021)
  13. M. S. Zaini, J. Y. C. Liew, S. A. Alang Ahmad, A. R. Mohmad, M. Kamarudin, “Photoluminescence investigation of carrier localization in colloidal PbS and PbS/MnS quantum dots”, ACS Omega 5,  30956 (2020)
  14. L. Hasanah, C. Julian, B. Mulyanti, A. Aransa, R. Sumatri, M. H. Johari, J. P. R. David, A. R. Mohmad, “Photoluminescence and Raman scattering of GaAsBi alloy”, Sains Malaysiana 49, 2559 (2020)
  15. M. S. Zaini, J. Y. C. Liew, S. A. Alang Ahmad, A. R. Mohmad, M. Kamarudin, “Quantum confinement effect and photoenhancement of photoluminescence of PbS and PbS/MnS quantum dots”, Applied Sciences 10,  6282 (2020)
  16. M. H. Johari, M. S. Sirat, M. A. Mohamed, S. N. F. Mohd Nasir, M. A. Mat Teridi, A. R. Mohmad, “Effects of Mo vapor concentration on the morphology of vertically standing MoS2 nanoflakes”, Nanotechnology 31, 305710 (2020)
  17. Yang, A. R. Mohmad, Y. Wang, R. Fullon, X. Song, F. Zhao, I. Bozkurt, M. Augustin, E. J. G. Santos, H. S. Shin, W. Zhang, D. Voiry, H. Y. Jeong, M. Chhowalla, “Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”, Nature Materials 18, 1309 (2019)
  18. S. Zaini, M. A. Kamarudin, J. L. Ying Chyi, S. A. Alang Ahmad, A. R. Mohmad, “Temperature and power dependence of photoluminescence in PbS quantum dots nanoparticles”, Sains Malaysiana 48, 1281 (2019)
  19. N. A. N Azmy, A. A. A. Bakar, N. Arsad, S. Idris, A. R. Mohmad, A. A Hamid, “Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor”, Applied Surface Science 392, 1134 (2017)
  20. M. Alizadeh, V. Ganesh, B. T. Goh, C. F. Dee, A. R. Mohmad, S. A. Rahman, “Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation, Applied Surface Science 378, 150 (2016)
  21. R. D. Richards, C. J. Hunter, F. Bastiman, A. R. Mohmad, J. P. R. David, “Telecommunication wavelength GaAsBi light emitting diodes”, IET Optoelectronics 10, 34 (2016)
  22. A. R. Mohmad, F. Bastiman, C. J. Hunter, F. Harun, D. F. Reyes, D. L. Sales, D. Gonzalez, R. D. Richards, J. P. R. David, B. Y. Majlis, “Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures” Semiconductor Science and Technology 30, 094018 (2015)
  23. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David and B. Y. Majlis, “Localization effects and band gap of GaAsBi alloys”, Phys. Stat. Solidi. B 251 1276 (2014)
  24. R. D. Richards, F. Bastiman, C. J. Hunter, D. F. Mendes, A. R. Mohmad, J. S. Roberts, and J. P. R. David, “Molecular beam epitaxy growth of GaAsBi using As2 and As4”, J. Cryst. Growth 390 120 (2014)
  25. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Room temperature photoluminescence enhancement in GaAsBi alloys”, Phys. Stat. Solidi. C 9 259 (2012)
  26. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng and J. P. R. David, “Effects of rapid thermal annealing on GaAsBi alloys”, Appl. Phys. Lett 101 012106 (2012)
  27. F. Bastiman, A. R. Mohmad, J. S. Ng, S. J. Sweeney and J. P. R. David, “Non – stoichiometric GaAsBi / GaAs (100) molecular beam epitaxy growth”, J. Cryst. Growth 338 57 (2012)
  28. C. J. Hunter, F. Bastiman, A. R. Mohmad, R. Richards, J. S. Ng, S. J. Sweeney and J. P. R. David, “Absorption characteristics of GaAsBi/GaAs diodes in the near infra-red”, IEEE Photon. Technol. Lett. 24 2191 (2012)
  29. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Photoluminescence investigation of high quality GaAsBi on GaAs”, Appl. Phys. Lett. 98 122107 (2011)
  30. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney and J. P. R. David, “The effect of Bi composition to the optical quality of GaAsBi”, Appl. Phys. Lett. 99 042107 (2011)
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