Sains Malaysiana 37(3): 245-248(2008)

 

Optical Properties of InGaAs/GaAs Multi Quantum Wells Structure

Grown By Molecular Beam Epitaxy

(Sifat Optik bagi InGaAs/GaAs Berbilang Perigi Kuantum yang ditumbuhkan

Menggunakan Epitaksi Alur Molekul) 

 

 

Mohd Sharizal Alias, Mohd Fauzi Maulud,

Mohd Razman Yahya & Abdul Fatah Awang Mat

Microelectronic & Nanotechnology Program

Telekom Research & Development (TMR&D)

Idea Tower, UPM-MTDC, Lebuh Silikon

43400 Serdang, Selangor, Malaysia

 

Soile Suomalainen

Optoelectronics Research Center (ORC)

Tampere University of Technology

P. O. Box 692, FIN-33101 Tampere

Finland

 

Received: 12 June 2007 / Accepted: 4 December 2007

 

 

ABSTRACT

Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.

 

Keywords: Quantum well; InGaAs; semiconductor laser; material gain

 

 

ABSTRAK

Analisis terperinci bagi sifat optik struktur InGaAs/GaAs QW bagi operasi laser semikonduktor 980 nm  diterangkan dari aspek eksperimen dan teori. Struktur perigi kuantum InGaAs/GaAs ditumbuhkan menggunakan epitaksi alur molekul pada komposisi Indium dan ketebalan perigi kuantum yang berbeza untuk perbandingan sifat optik. Spektrum fotoluminasi daripada pengukuran menunjukkan bahawa spektrum adalah dalam persetujuan yang bagus dengan hasil simulasi. Simulasi terperinci keatas pekali peningkatan optik bahan bagi perigi kuantum InGaAs/GaAs sebagai fungsi kepada ketumpatan pembawa dan suhu operasi turut dilakukan untuk mengoptimumkan reka bentuk laser semikonduktor bagi tujuan fabrikasi peranti laser.          

 

Kata kunci: Perigi kuantum; InGaAs; laser semikonduktor; peningkatan bahan

 

 

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