Sains Malaysiana:
38(3): 295-298 (2008)
Reliability Issues of Bottom-Contact Pentacene
Thin-Film Transistors
(Isu-isu
Kebolehpercayaan Transistor Filem Nipis Pentasen dengan Sentuhan
Bawah)
Jong Duk Lee
Inter-University
Semiconductor Research Center (ISRC)
and School
of Electrical Engineering
Seoul National
University
Byung-Gook
Park and Keum-Dong Jung
San 56-1,
Sillim-dong, Gwanak-gu, Seoul 151-742
Republic
of Korea
ABSTRACT
Bottom-contact
pentacene OTFTs are fabricated using cross-linked poly(vinyl alcohol)
(PVA) insulator and its reliability characteristics are analyzed. The hysteresis of the OTFTs
is mainly caused by the electrons that are injected from the gate
electrode to the cross-linked PVA insulator. To block the injection
of electrons, plasma-enhanced chemical vapor deposition (PECVD)
SiO2 layer is inserted between the gate electrode and
the cross-linked PVA layer, so that the minimum hysteresis can be
obtained. In addition, the effects of the gate bias stress as a
function of time is investigated to examine the long-term reliability
of the device during the operation.
Keywords: Organic thin-film transistors, OTFT,
bottom-contact, reliability, hysteresis
ABSTRAK
Pentasen dengan
sentuhan bawah OTFT telah difabrikasi dengan menggunakan penebat
poli(vinil alkohol) (PVA)
rangkaian silang. Ciri-ciri
kebolehpercayaannya telah dianalisis.
Histeresis dalam OTFT sebahagian besarnya disebabkan oleh
elektron yang disuntik daripada elektrod get ke penebat rangkaian
silang PVA. Untuk menghalang suntikan elektron, lapisan SiO2
yang didepositkan melalui kaedah wap kimia terbantu plasma (PECVD)
diselitkan antara elektrod get dengan lapisan rangkaian silang PVA
supaya histeresis adalah
minimum. Disamping itu kesan
tegasan dari pincangan get sebagai fungsi suhu dikaji untuk mengetahui
kebolehpercayaan peranti semasa operasi dalam masa yang panjang.
Kata kunci:
transistor filem nipis organik; OTFT; sentuhan bawah; kebolehpercayaan;
histeresis
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