Sains
Malaysiana 38(6)(2009): 889–894
Fabrication of Deep Trenches
in Silicon Wafer using Deep Reactive Ion Etching with Aluminum Mask
(Fabrikasi
Jurang dalam pada Wafer Silikon Menggunakan Punaran Ion Reaktif Dalam dengan
Topeng Aluminium)
Bahram Azizollah Ganji* &
Burhanuddin Yeop Majlis
Institute of Microengineering
and Nanoelectronics (IMEN)
Universiti Kebangsaan Malaysia,
43600 UKM Bangi,
Selangor D.E, Malaysia
Bahram Azizollah Ganji
Department of Electrical
Engineering, Babol University of Technology, 484 Babol, IRAN
Diserahkan: 13 Januari 2009 / Diterima:
3 Februari 2009
ABSTRACT
In this
paper, a deep-reactive ion etching (DRIE) process for fabricating microelectromechanical system (MEMS) silicon trenches with a depth of more than 250 μm is
described. The DRIE was
produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a
Plasmalab System 100 ICP 180 at
different RF powers. A series of experiments
were performed to determine the etch rate and selectivity of some masking
materials such as resists and metal (Al). Experiments showed that different
materials have different etch rates, but for the Al mask, an etch rate of 5.44
¥ 10-3 nm/min was achieved, that
exhibited stronger resistance against RIE than photo resists. By controlling the major parameters for
plasma etch, an etch rate of 2.85 microns per minute for silicon and a high
selectivity of 5.24 ¥ 105 to the Al
etch mask have been obtained. A 90 min etching experiments using etching gas SF6 of 60 standard cubic centimeters per minutes (sccm) with oxygen
(13 sccm) were performed by supplying RF power of 5 W to an ICP of 600 watts, and silicon etching process with a depth of 257
μm was demonstrated. Our experiments showed that Al is the best mask
material for very deep trenches in silicon.
Keywords:
Al mask; deep trench; deep trenches ion etching; etch rate; silicon structure
ABSTRAK
Kertas ini
menerangkan proses punaran ion reaktif dalam (DRIE) yang dijalankan dalam memfabrikasi jurang-jurang silikon MEMS dengan kedalaman melebihi 250 μm. Proses DRIE dijalankan dalam plasma sulfur heksafluorida (SF6) beroksigen, dengan sampel disejukkan ke suhu kryogenik
menggunakan Plasmalab System 100 ICP 180 pada kuasa RF yang
berbeza. Satu jujukan uji kaji kemudian dijalankan untuk menentukan kadar
punaran dan selektiviti bahan topeng seperti rintang foto dan logam
(aluminium). Uji kaji menunjukkan bahan-bahan berbeza mempunyai kadar punaran
yang berbeza tetapi bagi topeng aluminium, kadar punaran 5.44 ¥ 10-3 nm/minit telah diperoleh, seterusnya menunjukkan ketahanannya
yang kuat terhadap RIE berbanding
rintang foto. Dengan mengawal parameter-parameter utama seperti punaran plasma,
kadar punaran 2.85 mikron/minit dan selektiviti 5.24 ¥ 105 terhadap topeng aluminium telah diperoleh. Uji kaji punaran
selama 90 minit menggunakan gas SF6 pada piawai 60 standard kubik cm per minit (sccm) dengan oksigen
(13 sccm) telah dijalankan dengan membekalkan kuasa RF 5W kepada ICP 600 Watt,
dan proses pemunaran silikon pada kedalaman 257 μm telah dilaksanakan. Uji kaji
kami menunjukkan aluminium adalah bahan yang terbaik untuk dijadikan
topeng bagi memfabrikasi jurang dalam pada silikon.
Kata kunci:
Jurang dalam; kadar punaran; punaran kering berkedalaman tinggi; struktur
silikon; topeng Al
RUJUKAN
Akashil, T., Yoshimura, Y. &
Higashiyama, S. 2005. Deep reactive ion etching of pyrex glass using a bonded
silicon wafer as an etching mask. 18th IEEE International Conference on Micro Elecro Mechanical Systems pp. 520-525.
Akushi, T., Kanamaru, I. M., Kazumu,
A., Itou, Y., Horino, I. M., Fukudu, K., Ishikawa, T., Huradu, T. & Okada,
R. 2004. Fabrication of a 35-channel optical scanner integrated by passive-
self alignment using through-holes precisely formed by DRIE. 17th IEEE International Conference
on Micro Elecro Mechanical Systems pp.
677-680.
Ayon, A.A., Braff, B., Lin, C.C.,
Sawin, H.H. & Schmidt, M.A. 1999. Characterization of a time multiplexed
inductively coupled plasma etcher. J.Electrochem. Soc. 146: 339–339.
Belov, N. & Khe, N. 2002. Using
deep RIE for micromachining SOI wafers. Electronic Components and Technology
Conference, IEEE. pp. 1162-1166.
Burhanuddin Y.M., Wong, Y.Y. &
Sooriakumar, K. 2005. Optimization of deep trench etching process for silicon
MEMS structure using Deep Reactive Ion Etching. NSM 2005 Proc. p. 285-289.
Chabloz, M., Sakai, Y., Matsuura, T.
& Tsutsumi, K. 2000. Improvement of sidewall roughness in deep silicon
etching. Microsyst. Technol. 6: 86-89.
Chuang, Y.J., Tseng, F.G. & Lin,
W.K. 2002. Reduction of diffraction effect of UV exposure on SU-8 negative
thick photoresist by air gap elimination. Microsyst. Technol. 8:
308-313.
Coburn, J.W. & Winters, H.F.
1979. Plasma etching—a discussion of mechanisms. J. Vac. Sci. Technol. 16:
391-403.
Fu, L., Miao, J.M., Li, X.X. &
Lin, R.M. 2001. Study of deep silicon etching for micro-gyroscope fabrication. Appl.
Surface Sci. 177: 78-84.
Gao, J.X., Yeo, L.P., Chan-Park, M.
B., Miao, J.M., Yan, Y.H., Sun, J.B., Lam, Y.C. & Yue, C.Y. 2006. Antistick
postpassivation of high-aspect ratio silicon molds fabricated by Deep-Reactive
Ion Etching. Journal of Microelectromechanical Systems 15: 84-93.
Glenn, B. & Salupo1, C. S. 2000.
Deep RIE process for silicon carbide power electronics MEMS. Published in
Materials Research Society Symposium Proceedings 622: 1-6.
Iliescu, C. & Miao, J. 2003.
One-mask process for silicon accelerometers on pyrex glass utilizing notching
effect in ICP DRIE. Electron. Lett. 39: 658-659.
Miao, J., Lin, R., Chen, L., Zou,
Q., Lim, S.Y. & Seah, S.H. 2002. Design considerations in micromachined
silicon microphones. Microelectronics Journal, Published by Elsevier Science
Ltd. 33: 21-28.
Toshiyoshi, H., Isamoto, K.,
Morosawa, A., Tei, M. & Fujita, H. 2003. A 5-volt operated MEMS variable
optical attenuator. In Proc. Transducers 8-12: 1768-1771.
Waits, C.M., Morgan, B., Kastantin,
M. & Ghodssi, R. 2005. Microfabrication of 3D silicon MEMS structures using
gray-scale lithography and deep reactive ion etching. Sensors and Actuators
A 119: 245-253.
Zhang, Z.L. & MacDonald, N.C.
1992. A RIE process for submicron, silicon electromechanical structures. J.
Micromech. Microeng. 2: 31-31.
*Pengarang untuk
surat-menyurat; email: baganji@vlsi.eng.ukm.my
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