Sains Malaysiana
40(1)(2011): 63–66
Effect of Plasma
Power and Flow Rate of Silane Gas on Diameter of Silicon Nanowires Grown by
Plasma Enhanced Chemical Vapor Deposition
(Kesan Kuasa Plasma
dan Kadar Aliran Gas Silan Terhadap Diameter Dawai Nano Silikon yang
Ditumbuhkan Melalui Deposisi Wap Kimia Berbantukan Plasma)
1Habib Hamidinezhad*, 1Yussof Wahab, 2Zulkafli Othaman
& 1Imam Sumpono
1Ibnu Sina Institute for Fundamental, Science Studies (IIS)
Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia
2Physics Department, Faculty of Science
Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia
Diserahkan: 7 Disember 2009 / Diterima:
15 Julai 2010
ABSTRACT
Silicon nanowires (SiNWs)
have been synthesized by plasma enhanced chemical vapor deposition (PECVD)
at different power for generation of plasma and different flow rate of silane
gas. Silane (10% SiH4 in
Ar) gas with flow rate ranging between 6-15 standard cubic centimeter per
minute(sccm) were employed as the source and gold colloid as the catalyst. A
p-type Si (100) wafer was used as substrate in this experiment and the
substrate’s temperature was 370°C. The plasma power range was 12-17 watts. The
grown silicon nanowires were analyzed using field emission scanning electron microscopy
(FESEM)
and energy dispersive X-ray spectroscopy (EDX). FESEM results show that some silicon nanowires are cone like and some
of them are cylindrical. The EDX result revealed that the
existence of silicon and oxygen elements in the nanowires. The silicon
nanowires obtained have different diameters and lengths and the SiNWs consist
of silicon core which are surrounded by oxide sheath. It has been found that
the plasma power and flow rate of the silane gas influence the size of silicon
nananowires growth by PECVD. The diameter of wires decreased
from 140 nm to 80 nm averagely when plasma power was increased from 12 to 17
watts. The diameter also increased about 90 nm to 150 nm when the flow rate of
silane gas is increased from 6 to 15 sccm.
Keywords: Gold catalyst; PECVD;
silicon nanowire
ABSTRAK
Dawai nano silicon (SiNW)
telah dihasilkan secara pemendapan wap kimia peneguh plasma (PECVD)
dengan kuasa penjanaan plasma dan kadar aliran gas silan yang berbeza. Gas
silan (10% SiH4 dalam
Ar) dengan kadar aliran daripada 6 -15 centimeter isipadu piawai seminit (sccm)
digunakan sebagai sumber dan koloid emas sebagai pemangkin. Wafer Si (100)
jenis-p digunakan sebagai substrat dalam uji kaji ini dengan suhu substrat
370°C. Kuasa plasma adalah dalam julat 12-17 watt. Dawai nano silikon yang
ditumbukan dianalisis dengan menggunakan Mikroskop Pengimbas Elektron Emisi
Medan (FESEM) dan spektroskopi sinar-X penyebar tenaga (EDX).
Hasil FESEM menunjukkan sebahagian dawai nano silikon berbentuk
kon dan sebahagian berbentuk silinder. Hasil EDX pula
menunjukkan kewujudan unsur silikon dan oksigen di dalam dawai. Dawai nano
silikon yang dihasilkan mempunyai diameter dan panjang yang berlainan dan SiNW
terdiri dari teras silikon yang dikelilingi oleh lapisan oksida. Didapati saiz
SiNWs dipengaruhi oleh kuasa plasma dan kadar aliram gas silan. Diameter purata
dawai berkurang daripadsa 140 nm ke 80 nm apabila kuasa plasma bertambah
daripada 12 ke 17 watt. Diameter dawai juga bertambah daripada 90 nm ke 150 nm
apabila kadar aliran gas silan bertambah daripada 6 ke 15 sccm.
Kata kunci; Dawai
nano silicon; emas pemangkin; PECVD
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*Pengarang
untuk surat-menyurat; email: habib_hamidinezhad@yahoo.com
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