Sains Malaysiana 40(3)(2011): 251–257

Structural, Optical and Electrical Properties of Fluorine Doped Tin Oxide Thin Films Deposited Using Inkjet Printing Technique

(Struktur, Sifat Optik dan Elektrik Filem Nipis Timah Oksida Terdop Florin Dimendapkan Mengguna Teknik Cetakan Inkjet)

Wan Zurina Samad^*,1, Muhamad Mat Salleh², Ashkan Shafiee² & Mohd Ambar Yarmo¹

¹School of Chemical Sciences and Food Technology, Faculty of Science and Technology

Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor D.E., Malaysia

²Institute of Microengineering and Nanoelectronics (IMEN)

Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor D.E., Malaysia

Diserahkan: 21 Julai 2010 / Diterima: 3 September 2010

ABSTRACT

This paper reports on structural, optical transmittance and electrical properties of fluorine-doped tin oxide (FTO) thin films deposited using an inkjet printer. The FTO ink was synthesized from a mixture of tin chloride pentahydrate (SnCl₄.5H₂O) and ammonium fluoride (NH4F) solutions. The thin films were deposited on glass substrates at ambient temperature or heated at 40^oC and 60^oC. The surface electronic state and the elemental composition of the thin films were analyzed using XPS spectroscopy. The spectra of the FTO thin films revealed that tin, oxygen, fluoride and carbon were present in the samples. The signals corresponding to Sn 3d_5/2, O_1s, and F_1s were found at 486.6 eV, 530.5 eV and 684.5 eV, respectively. XRD analysis showed that the FTO films were in the form of crystalline with cassiterite shape. The optical and electrical properties of the films were affected by the deposition temperatures. It was observed the film deposited at 40^oC has the optimum optical transmittance and sheet resistivity which were 91%T and 16 Ω/, respectively.

Keywords: Fluorine-doped tin oxide; inkjet printing; transparent conducting oxide

ABSTRAK

Kertas ini melaporkan sifat struktur, transmisi optikal dan kerintangan bahan timah oksida dop florin (FTO) yang disalut menggunakan teknik cetakan inkjet. Dakwat FTO dihasilkan melalui kaedah percampuran antara bahan timah klorida pentahidrat (SnCl₄.5H₂O) dengan ammonium florida (NH4F). Penyalutan filem lapisan nipis FTO di atas substrat kaca telah dijalankan pada suhu bilik, 40^oC dan 60^oC. Analisis permukaan dan komposisi kimia telah dijalankan menggunakan XPS. Analisis XPS menunjukkan kewujudan unsur penting seperti Sn, oksigen, florin dan juga karbon. Unsur tersebut wujud dengan puncak isyarat Sn 3d_5/2, O_1s, and F_1s pada tenaga ikatan 486.6 eV, 530.5 eV dan 684.4 eV. Pencirian menggunakan XRD pula menunjukkan bahawa sampel FTO yang terhasil bersifat hablur dan mempunyai bentuk hablur kasiterit. Didapati, sifat optik dan elektrik filem nipis yang dihasilkan adalah dipengaruhi oleh suhu semasa penyalutan. Kerintangan elektrik yang optimum pada 16 Ω/dengan ciri optik pada 91%T telah diperoleh bagi filem nipis yang disalut pada suhu 40^oC.

Kata kunci: Cetakan inkjet; oksida lutsinar mengkonduksi; timah oksida terdop fluorin

RUJUKAN

Amanullah, F.M., Pratap, K.J. & Hari Babu, V. 1998. Compositional analysis and depth profile studies on undoped and doped tin oxide films prepared by spray technique. Journal of Materials science and Engineering B 52: 93-98.

Banerjee, A.N., Kundoo, S., Saha, P. & Chattopadhyay, K.K. 2003. Synthesis and characterization of nano-crystalline fluorine-doped tin oxide thin films by sol-gel method. Journal of Sol-Gel Science and Technology 28: 105-110.

Bisht, H., Eun, H.T., Mehrtens, A. & Aegerter, M.A. 1999. Comparison of spray pyrolyzed FTO, ATO, and ITO coatings for flat and bent glass substrates. Thin Solid Films 351: 109-114.

Chabinyc, M.L., Wong, W.S., Arias, A.C., Ready, S., Lujan, R.A., Daniel, J.H., Krusor, B., Apte, R.B., Salleo, A. & Street, R.A. 2005. Printing methods and materials for large-area electronic devices. Proceedings of the IEEE 93: 1491-1498.

Ding, X., Li, Y., Wang, D. & Yin, Qingrui. 2004. Fabrication of BaTiO₃ dielectric films by ink-jet printing. Ceramic International 30: 1885-1887.

Elangovan, E. & Ramamurthi, K. 2005. Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor. Thin Solid Films 476: 231-236.

Han, C.H., Han, S.D., Gwak, J. & Khatkar, S.P. 2007. Synthesis of indium tin oxide (ITO) and fluorine-doped tin oxide (FTO) nano-powder by sol-gel combustion hybrid method. Materials Letters 62: 1701-1703.

Li, D., Haneda, H., Hishita, S., Ohashi, N. & Labhsetwar, N.K. 2005. Fluorine-doped TiO₂ powders prepared by spray pyrolysis and their improved photocatalytic activity for decomposition of gas-phase acetaldehyde. Journal of Fluorine Chemistry 126: 67-77.

Khonsari, A., Bauduin, F., Donsati, N. & Amouroux, J. 2003. Deposition of transparent conductive tin oxide thin films doped with fluorine by PACVD. Thin Solid Films 427: 208

Kim, H., Kushto, G.P., Auyeung, R.C.Y., & Pique, A. 2008. Optimization of F-doped SnO₂ electrodes for organic photovoltaic devices. Appl. Phys. A 93: 521-526.

Martinez, A.I., Huerta, L., Rueda de Leon, J.M.O., Acosta, D., Malik, O. & Aguilar, M. 2006. Physicochemical characteristics of fluorine doped tin oxide films. Journal of Physics D: Applied Physics 39: 5091-5096.

Martel, A. Caballero-Briones, F., Bartola-Perez, P., Iribarren, A., Castro-Rodriguez, R., Zapata-Navarro, A. & Pena, J.L. 2001. Chemical and phase composition of SnO_x: F films grown by DC reactive sputtering. Surf. Coat. Technol. 148: 103.

Moholkar, A.V., Pawar, S.M., Rajpure, K.Y. & Bhosale, C.H. 2007. Effect of solvent ratio on the properties of highly oreinted sprayed fluorine-doped tin oxide thin films. Materials Letters 61: 3030-3036.

Purushothaman, K.K., Dhanashankar, M. & Muralidharan, G. 2008. Preparation and characterization of F doped SnO₂ films and electrochromic properties of FTO/NiO films. Current Applied Physics 9(7): 67-72.

Russo, B. & Cao, G.Z. 2008. Fabrication and characterization of fluorine-doped tin oxide films and nanorod arrays via spray pyrolysis. Applied Physics A 90: 311-315.

Singh, S.P., Saxena, A.K., Tiwari, L.M. & Agnihotri, D.P. 1985. SnO₂:F/n-Si and In₂O₃:Sn/n-Si semiconductor/insulator/ semiconductor solar cells. Thin Solid Films 127: 77.

Thangaraju, B. 2002. Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped SnO₂ thin films from SnCl₂ precursor. Thin Solid Films 402: 71-78.

Tsud, N., Johanek, V., Stara, I., Veltruska, K. & Matolin, V. 2001. XPS, ISS, and TPD study of Pd-Sn interactions on Pd-SnO_x systerm. Thin Solid Films 391: 204-208.

*Pengarang untuk surat-menyurat; email: zurina13@gmail.com