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Current and Conductance Modulation at Elevated Temperature in Siliconand InAs-based Spin Field-Effect Transistors (Modulasi Arus dan Konduktans
pada Suhu Tinggi dalam Transistor Silikon
dan InAs
Berasaskan Spin Kesan Medan)
Dmitri Osintsev*, ViktorSverdlov, AlexanderMakarov
& SiegfriedSelberherr
Institute
for Microelectronics, TU Wien, Gusshaustr, 27-29, Wien 1040,
Austria
Diserahkan:
7 Januari 2012 / Diterima: 21 Mei 2012
ABSTRACT
Spin field-effect transistors
(SpinFETs) are promising candidates for future integrated microelectronic
circuits. A SpinFET is composed of two ferromagnetic contacts (source and
drain), which sandwich a semiconductor channel. Current modulation is achieved
by electrically tuning the gate voltage dependent strength of the spin-orbit
interaction in the semiconductor region. We investigated the properties of
SpinFETs for various parameters - the band mismatch, the barrier height between
the contacts and the channel and the strength of the spin-orbit coupling, for
various temperatures. We demonstrated that the creation of Schottky barriers
between the channel and the contacts guarantees a pronounced modulation of the
magnetoresistance sufficient to open a possibility to operate SpinFETs at room
temperature. We also demonstrated that silicon fins with [100] orientation
exhibit a stronger dependence on the value of the spin-orbit interaction and
are thus preferable for practical realization of silicon-based SpinFETs.
Keywords: Spin field-effect
transistor; spin-orbit interaction; temperature
ABSTRAK
Transistor spin kesan medan (SpinFETs) adalah calon yang menjanjikan masa depan
mikroelektronik litar bersepadu. SpinFET terdiri daripada dua
sentuhan feromagnetik (punca dan salir), antara saluran semikonduktor. Modulasi arus dicapai dengan pelarasan secara elektrik kekuatan voltan get
bergantung bagi interaksi orbit putaran di rantau semikonduktor. Sifat SpinFETs bagi pelbagai parameter - ketidaksepadanan jalur,
ketinggian sempadan di antara sentuhan dan saluran dan kekuatan gandingan
putaran orbit untuk pelbagai suhu telah dikaji. Ditunjukkan
bahawa pembentukan sempadan Schottky antara saluran dan sentuhan menjamin
modulasi ketara magnetorintangan yang mencukupi untuk membuka kemungkinan untuk
operasi SpinFETs pada suhu bilik. Ditunjukkan juga bahawa sirip silikon
dengan [100] orientasi menunjukkan pergantungan yang kuat kepada nilai
interaksi putaran orbit dan dengan itu lebih baik untuk realisasi praktikal
SpinFETs berasaskan silikon.
Kata
kunci: Interaksi spin-orbit; suhu; transistor spin kesan medan
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*Pengarang untuk surat-menyurat; email: osintsev@iue.tuwien.ac.at
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