Sains Malaysiana 42(7)(2013): 961–966

 

High Transparency Iron Doped Indium Oxide (In2—xFexO3, x = 0.0, 0.05,

0.25, 0.35 and 0.45) Films Prepared by the Sol-gel Method

(Filem Indium Oksida Terdop Ferum (In2-xFexO3, x = 0.0, 0.05, 0.25, 0.35 dan 0.45)

Berlutsinar Tinggi yang Disediakan dengan Kaedah Sol Gel)

 

N.B. Ibrahim*, H. Baqiah& M.H. Abdullah

School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia

43600 Bangi, Selangor, D.E. Malaysia

 

Diserahkan: 14 Mei 2012/Diterima: 27 November 2012

 

ABSTRACT

High quality indium oxide and iron doped indium oxide nanocrystalline films were prepared by the sol-gel method followed by a spin coating technique. The samples were characterized by an X-ray diffractometer, an atomic force microscopy and a UV-vis spectroscopy. All samples had good crystallinity with a preferred orientation in the (222) direction. The crystallite size increased from 12.1 nm for the pure sample to 16.1 nm for the sample with x=0.35 and then decreased to 12.1 nm for the sample with x=0.45. All samples contained nanometer grain sizes with a smooth surface. All films showed a high transmission of over 91% in the wavelength range of 200-800 nm.

 

Keywords: Crystallization; indium oxide; transmission

 

ABSTRAK

 

Filem nanohablur indium oksida dan indium oksida terdop ferum berkualiti tinggi telah disediakan dengan kaedah sol-gel diikuti dengan teknik salutan berputar. Sampel dicirikan dengan meter pembelauan sinar-X, mikroskop daya atom dan spektroskopi sinar nampak – UV. Kesemua sampel mempunyai penghabluran yang baik dengan orientasi pada arah (222). Saiz hablur meningkat daripada 12 nm untuk sampel tulen ke 16.1 nm untuk sampel x=0.35 dan berkurangan kepada 12.1 untuk sampel  x=0.45. Kesemua sampel mengandungi butiran bersaiz nanometer dan permukaan yang rata. Kesemua sampel menunjukkan transmisi yang tinggi melebihi 91% dalam julat panjang gelombang 200 - 800 nm.

 

Kata kunci: Indium oksida; penghabluran; transmisi

RUJUKAN

Antonia Sonia Alves Cardoso, D. 2011. The effects of various annealing regimes on the microstructure and physical properties of ITO (In2O3:Sn) thin films deposited by electron beam evaporation for solar energy applications. Renewable Energy 36(4): 1153-1165.

Chen, H.Z., Kao, M.C., Young, S.L., Yu, C.C., Lin, C.H., Lee, C.M. & Ou, C.R. 2009. Effects of annealing atmosphere on microstructure and ferroelectric properties of praseodymium-doped Bi4Ti3O12 thin films prepared by sol–gel method. Thin Solid Films 517(17): 4818-4821.

Chopra, K.L. 1969. Thin Film Phenomena. New York: McGraw-Hil, Inc.

Cullity, B.D. 1978. Elements of X-ray Diffraction. 2nd ed. New York: Addison-Wesley Pub. Co. Inc. p. 102.

Ftema, W., Aldbea, Ibrahim N.B., Mustaffa Hj Abdulah & Ramadan, E.S. 2012. Structural and magnetic properties of TbxY3-xFe5O12 9 (0 ≤ x ≤ 0.8) thin film prepared via sol-gel method. Journal of Sol-gel Science and Technology 62(3): 483-489.

Gao, H., Zhigang Sun, Wei Duan, Yanbing Chen, & Mi Li. 2010. Magnetism regulation of (In1-xFex)2O3semiconductors prepared by sol-gel method. Journal of Wuhan University of Technology--Materials Science 25(1): 20-23.

Gupta, A., Hongtao Cao, Kinnari Parekh, Rao, K.V., Raju, A.R. & Waghmare, U.V. 2007. Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In[sub 2]O[sub 3]. Journal of Applied Physics 101(9): 09N513-513.

Hong Li, Gaoling Zhao, Bin Song & Gaorong Han. 2008. Preparation of macroporous and mesoporous TiO2 film with various solvent. Materials Letters 62: 3395-3397.

Hsu, C.Y. 2012. Effects of crystalline structural transition on electronic-band structure of chromium-doped indium oxide. Thin Solid Films 520(6): 2311-2315.

Kang, D-W., Kuk, Seung-Hee., Ji, Kwang-Sun., Lee, Heon-Min & Han, Min-Koo. 2011. Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications. Solar Energy Materials and Solar Cells 95(1): 138-141.

Kim, K-C., Kim, Eung-kwon & Kim, Young-Sung. 2007. Growth and physical properties of sol–gel derived Co doped ZnO thin film. Superlattices and Microstructures 42(1-6): 246-250.

Kong, L., Ma, J., Caina Luan, Zhen Zhu & Qiaoqun Yu. 2011. Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate. Surface Science 605(9-10): 977-981.

Li, X., Xia, C., Guangqing Pei & Xiaoli He. 2007. Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3. Journal of Physics and Chemistry of Solids 68(10): 1836-1840.

Li, Z-H., Cho, E.S. & Sang Jik Kwon. 2010. Laser direct patterning of the T-shaped ITO electrode for high-efficiency alternative current plasma display panels. Applied Surface Science 257(3): 776-780.

Manavizadeh, N., Boroumand, F.A., Ebrahim Asl-Soleimani, Farshid Raissi, Sheida Bagherzadeh, Alireza Khodayari & Mohammad Amin Rasouli. 2009. Influence of substrates on the structural and morphological properties of RF sputtered ITO thin films for photovoltaic application. Thin Solid Films 517(7): 2324-2327.

Munawar Basha, S., Ramasubramanian, S., Rajagopalan, M., Kumar, J., Tae Won Kang, Ganapathi Subramaniam, N. & Younghae Kwon. 2011. Investigations on cobalt doped GaN for spintronic applications. Journal of Crystal Growth 318(1): 432-435.

Murakawa, Y.Y.K., Tajiri, T., Suzuka, T., Sasaki, M., Shimooka, H., Oku, M., Shishido, T. & Matsushima, S. 2004. Fe doping effects on the optical and magnetic properties of indium oxide. Trans Mater Res Soc Jpn 29(4): 1509-1511.

Pearton, S.J., Abernathy, C.R., Norton, D.P., Hebard, A.F., Park, Y.D., Boatner, L.A. & Budai, J.D. 2003. Advances in wide bandgap materials for semiconductor spintronics. Materials Science and Engineering: R: Reports 40(4): 137-168.

Reddy, K., Hays, J., Kundu, S., Dua, L., Biswas, P., Wang, C., Shutthanandan, V., Engelhard, M., Mathew, X. & Punnoose, A. 2007. Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. Journal of Materials Science: Materials in Electronics 18(12): 1197-1201.

Schubert, E.F. 2007. Physical Foundations of Solid-State Devices. New York: Rensselaer Polytechnic Troy Institute. p. 182.

Shaiboub, R., Ibrahim, N.B. & Abdullah, M.H. 2012. The physical properties of erbium-doped yttrium iron garnet films prepared by sol-gel method. Journal of Nanomaterials 2012: 1-5.

Shannon, R. 1976. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallographica Section A 32(5): 751-767.

Sharma, P., Gupta, A., Rao, K.V., Owens, F.J., Renu Sharma, Rajeev Ahuja, Osorio Guillen, J.M., Borje Johansson & Gehring, G.A. 2003. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nature Material 2(10): 673-677.

Shekhar, C., Gnanasekar, K.I., Prabhu, E., Jayaraman, V. & Gnanasekaran, T. 2011. In2O3+ xBaO (x=0.5–5 at.%) - Anovel material for trace level detection of NOx in the ambient. Sensors and Actuators B: Chemical 155(1): 19-27.

Yoo, Y.K., Xue, Q., Lee, H.C., Cheng, S., Xiang, X.D., Dionne, G.F., Xu, S., He, J., Chu, Y.S., Preite, S.D., Lofland, S.E. & Takeuchi, I. 2005. Bulk synthesis and high-temperature ferromagnetism of (In 1-xFex)2O3-σ with Cu co-doping. Applied Physics Letters 86(4): 042506-042501-042506-042503.

Zhao, B.C., Xia, B., Ho, H.W., Fan, Z.C. & Wang, L. 2009. Anomalous hall effect in Cu and Fe codoped In2O3 and ITO thin films. Physica B: Condensed Matter 404(16): 2117-2121.

 

 

*Pengarang untuk surat-menyurat; email: baayah@ukm.my

 

 

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