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Sains Malaysiana 51(6)(2022):
http://doi.org/10.17576/jsm-2022-5106-27
Atmospheric
Pressure Chemical Vapour Deposition Growth of Graphene for
the Synthesis of SiO2 Based
Graphene Ball
(Pertumbuhan Grafin melalui Endapan Wap Kimia Tekanan Atmosferauntuk Sintesis Bebola GrafinBerasaskan SiO2)
NURKHAIZAN ZULKEPLI1, 2, JUMRIL
YUNAS1, MOHD AMBRI MOHAMED1, MOHAMAD SHUKRI SIRAT1 & AZRUL
AZLAN HAMZAH1,*
1Institute of Microengineering and Nanoelectronics
(IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia
2Centre of Foundation Studies, Universiti Teknologi MARA, Cawangan Selangor, Kampus Dengkil, 43800 Dengkil, Selangor Darul Ehsan, Malaysia
Diserahkan: 28 Februari 2022/Diterima: 12 Mei 2022
Abstract
Graphene is a prominent carbon nanomaterial with fascinating
characteristics such as high conductivity and very high charge carrier mobility
at low temperatures. Numerous synthesis methods for graphene have been
established. Chemical vapour deposition (CVD) is among the most successful
methods to fabricate high-quality graphene. However, metal-catalyzed growth is used in
virtually all of the CVD techniques mentioned. To remove these metal catalysts
and relocate the graphene to the necessary dielectric substrate (SiO2/Si or
quartz), complex and sophisticated post-growth methods must be used, which
limits the usage of graphene in practical electronic components. In the present work, we conducted a preliminary study to
determine the suitable methane(CH4) flowrate, which could be used to synthesise SiO2 based
graphene ball. Few-layer graphene was grown on
a large area of copper(Cu) surface using 20 sccm CH4 in atmospheric pressure CVD (APCVD). The influence of CH4 flowrate on
graphene growth has been investigated. Graphene was deposited on a metal
catalyst substrate at optimum temperatures of 1000 °C.
Keywords: Atmospheric
pressure chemical vapour deposition; graphene; graphene ball; methane flowrate
Abstrak
Grafin merupakan bahan nano karbon ulung dengan ciri-ciri menarik seperti mempunyai sifat kekonduksian ion yang tinggi dan mobiliti pembawa cas yang amat tinggi pada suhu rendah. Banyak kaedah sintesis grafin yang mantap dibuat dan telah diiktiraf. Pemendapan wap kimia (CVD) merupakan antara kaedah yang paling berjaya dalam menghasilkan grafin berkualiti tinggi. Walau bagaimanapun, pertumbuhan logam pemangkin telah digunakan dalam hampir semua teknik CVD. Untuk menyingkirkan pemangkin logam ini dan memindahkan grafin ke substrat dielektrik yang diperlukan (SiO2/Si atau kuarza), kaedah pascapertumbuhan yang kompleks dan canggih perlu digunakan dan hal ini telah mengehadkan penggunaan grafin dalam komponen elektronik praktikal. Dalam penyelidikan ini, kami telah menjalankan kajian awal untuk menentukan kadar aliran metana (CH4) yang sesuai, yang boleh digunakan untuk mensintesis bebola grafin berasaskan SiO2. Grafin beberapa lapisan telah ditanam di kawasan besar permukaan tembaga (Cu) menggunakan 20 sccm CH4 dalam CVD tekanan atmosfera (APCVD). Pengaruh kadar aliran CH4 pada pertumbuhan grafin telah dikaji. Grafin telah didepositkan pada substrat pemangkin logam pada suhu optimum 1000 °C.
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*Pengarang untuk surat-menyurat; email: azlanhamzah@ukm.edu.my
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