Malaysian
Journal of Analytical Sciences Vol 19 No 6 (2015): 1303 - 1308
PERFORMANCE OF ORGANIC THIN FILM TRANSISTORS (OTFTs)
AT VARIOUS TEMPERATURES ON POLYETHYLENE TEREPHTHALATE (PET) SUBSTRATE
(Prestasi Transistor Organik
Filem Nipis
(OTFTs) pada Suhu yang Berbeza di atas Substrat Polietilena Tereftalat
(PET)
Nurhazwani Musa1*, Mohd Noor Ahmad1,
Nurul Farhanah Abd Halim1, Uda Hashim2, A. K. M. Shafiqul
Islam3
1School of Material Engineering,
Universiti
Malaysia Perlis, Kompleks Pusat Pengajian Jejawi
2,
Taman Muhibbah,
02600 Jejawi, Arau, Perlis, Malaysia
2 Institute of Nano Electronic
Engineering,
Universiti Malaysia Perlis, Lot 106, 108 & 110, Blok A, Taman Pertiwi
Indah,
Jalan Kangar-Alor Setar, Seriab 01000 Kangar, Perlis, Malaysia
3Faculty of Engineering Technology,
Universiti
Malaysia Perlis, 02100 Sungai Chuchuh, Padang Besar, Perlis, Malaysia
*Corresponding author: nurhazwani9389@yahoo.com
Received:
23 November 2014; Accepted: 3 September 2015
Abstract
Fabrication of organic thin film transistors (OTFTs) on a
flexible substrate has been the subject of much attention in the sensor
research community as its cost effective, low temperature processing, ease of
fabrication, disposability and delivery of accurate result. The OTFTs with pentacene as active layer and
polymethyl methacrylate (PMMA) as gate insulator was fabricated and its performance was
investigated. The PMMA and pentacene thin films were coated on indium tin oxide coated polyethylene terephthalate
(PET) substrate by a spin coating method. The substrates temperature were
varied at 40, 60, 80 and 100 oC prior to the deposition of aluminum
onto the interdigitated electrodes (IDE) structure via physical vapour deposition (PVD) method. The atomic
force microscopy (AFM) images and current-voltage (I-V) relationship indicated
that the variation of substrate temperature has an impact on both physical and
electrical properties of pentacene thin film transistors. The AFM images show
that the morphological grain size increased as the substrate temperature was
increased. In addition, the I-V measurement using SPA shown that the source-drain current of OTFTs was highest at
temperature 100 oC.
Keywords: Organic Thin Film Transistors (OTFTs),
pentacene, Polyethylene Terephthalate (PET) substrate, Polymethyl Methacrylate
(PMMA)
Abstrak
Fabrikasi
transistor organik filem nipis (OTFTs) di atas substrat fleksibel telah menjadi
perhatian dalam komuniti penyelidikan sensor kerana berkos sederhana, suhu
pemprosesan rendah, mudah difabrikasi, pakai buang dan memberikan keputusan
yang tepat. OTFTs dengan mnggunakan pentasina sebagai lapisan aktif dan
polimetil metakrilat (PMMA) sebagai pintu penebat telah difabrikasi dan
prestasinya dikaji. PMMA dan filem nipis pentasina disediakan di atas substrat
indium timah oksida bersalut polietilena tereftalat (PET) melalui kaedah
salutan putaran dan suhu permukaan dipelbagaikan pada 40, 60, 80 dan 100 oC
sebelum elektod interdigitated (IDE) aluminium dihasilkan melalui kaedah
pemendapan wap fizikal (PVD) pada substrat. Gambar daya mikroskop daya atom
(AFM) dan hubungan voltan semasa (I-V) telah menunjukkan bahawa suhu teleh
memberi impak terhadap sifat fizikal dan elektrik transistor filem nipis
pentasina tersebut. Gambar AFM
menunjukkan bahawa saiz butiran morfologi bertambah apabila suhu permukaan
meningkat. Di samping itu, ukuran I-V menggunakan SPA menunjukkan bahawa arus
punca-saliran OTFTs adalah tinggi pada suhu 100 oC.
Kata kunci: Organik filem nipis (OTFTs), pentasina,
Substrat Polietilena Tereftalat (PET), Polymetil Metakrilat (PMMA)
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