Sains Malaysiana 37(3): 255-259(2008)

 

Gallium Nitride: A Nanoscale Study using Electron

Microscopy and Associated Techniques

(Galium Nitrida: Kajian Skala Nano Menggunakan Mikroskop

Elektron dan Teknik-Teknik Berkaitan)

 

 

Mohammed Benaissa

CNRST, 52, Bd Omar Ibn Khattab

B.P. 8027, Agdal, 10102 Rabat, Morocco

 

Philippe Vennéguès

CNRS-CRHEA, Rue Bernard Grégory

06560 Valbonne, France

 

Received:  12 June 2007 / Accepted: 18 September 2007

 

 

ABSTRACT

 

A complete nanoscale study on GaN thin films doped with Mg. This study was carried out using TEM and associated techniques such as HREM, CBED, EDX and EELS. It was found that the presence of triangular defects (of few nanometers in size) within GaN:Mg films were at the origin of unexpected electrical and optical behaviors, such as a decrease in the free hole density at high Mg doping. It is shown that these defects are inversion domains limited with inversion-domains boundaries.

 

Keywords: Electron microscopy; Mg; GaN

 

 

ABSTRAK

 

Kajian skala nano yang lengkap film nipis GaN yang didop dengan Mg dilaporkan. Kajian telah dijalankan menggunakan TEM dan teknik-teknik berkaitan seperti HREM, CBED, EDX dan EELS.  Didapati kehadiran kecacatan segi tiga (dengan saiz beberapa nanometer)  dalam GaN:Mg merupakan punca kepada sifat elektrik yang tidak dijangka, seperti penurunan ketumpatan lohong bebas pada pengedopan Mg yang tinggi. Kecacatan ini adalah domain songsangan yang dihadkan oleh sempadan domain songsang.

 

Kata kunci:  Mikroskopi elektron; Mg; GaN

 

 

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