Sains Malaysiana 37(3): 281-283(2008) 

Electrical Characterization of Cross-linked ZnO Nanostructures Grown

on Si and Si/SiO₂ Substrate

(Ciri Elektrik Nanostruktur ZnO Taut Silang yang  

Ditumbuhkan di atas Substrat Si/SiO₂)

C. F. Dee Chang Fu, Burhanudin Yeop Majlis & Muhammad Mat Salleh

Institute of Microengineering and Nanoelectronics (IMEN),

Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

Muhammad Yahaya

School of Applied Physics, Universiti Kebangsaan Malaysia,

43600 Bangi, Selangor, Malaysia

ABSTRACT

ZnO nanostructures were synthesized on Si and Si/SiO₂ substrate by well established thermal-evaporation-deposition method which involves vapor-solid growth process for non–catalysts activated growth. Scanning electron micrograph shows difference type of ZnO nanostructures have been synthesized. Electrical I-V characterization was measured by using Al as electrode at room temperature. Schottky contacts were obtained for both contact of ZnO nanowires and Al. A symmetric metal-semiconductor-metal junction was obtained. A two-opposit-diode equivalent circuit was applied to explain this I-V characteristic.

Keyword: ZnO nanostructures; Schottky contacts; I-V measurement

ABSTRAK

Penumbuhan struktur nano disintesis di atas substrat Si dan Si/SiO₂ dengan menggunakan kaedah yang sudah terkenal iaitu kaedah pengewapan-pemendapan-terma di mana ia melibatkan proses penumbuhan wap-pepejal tanpa menggunakan pemangkin. Mikrograf imbasan electron menunjukkan pelbagai jenis nanostruktur  ZnO. Pencirian I-V telah dilakukan pada suhu bilik dengan menggunakan Al sebagai elektrod. Sentuhan Schottky didapati terbentuk pada kedua-dua nanostruktur dengan Al. Satu graf simpang simetri logam-semikonduktor-logam terbentuk diperolehi. Satu model yang terdiri daripada dua diod yang berhadapan satu sama lain telah digunakan bagi menerangkan sifat graf I-V yang diperolehi.

Kata kunci:  nanostruktur ZnO; sentuhan Schottky; pengukuran I-V

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