Sains Malaysiana 37(3):
285-288 (2008)
Nanoporous GaN Film Generated by Electro
Chemical Etching
(Filem GaN Berliang Nano yang Disediakan Melalui Punaran
Elektro Kimia)
F.K. Yam, Z. Hassan
& K.M. Omar
School of Physics
Universiti Sains Malaysia
11800 Penang, Malaysia
ABSTRACT
This
article reports on the studies of structural and optical properties
of nanoporous GaN
prepared by Pt assisted electro chemical etching. The porous GaN
samples were investigated by scanning electron microscopy (SEM),
atomic force microscopy (AFM), and optical transmission (OT). SEM
images liang indicated that the density of the pores increased with
etching duration, however, the etching duration has no significant
effect on the size and shape of the pores. AFM measurements exhibited
that the surface roughness was increased with etching durations,
however, for long etching duration, the increase of the surface
roughness became insignificant. OT measurements revealed that the
increase of pore density would lead to the reduction of light transmission.
The studies showed that the porosity could influence the structural
and optical properties of the GaN.
Keywords:
Porous GaN; structural properties; optical properties
ABSTRAK
Artikel
ini melaporkan kajian sifat-sifat struktur dan optik bagi GaN
nano
liang yang disediakan dengan punaran elektro-kimia
bantuan Pt. Sampel-sampel GaN berliang
dikaji dengan mikroskopi elektron imbasan (SEM), mikroskopi
(AFM) and pemancar optic (OT). Imej-imej SEM menunjukkan bahawa
ketumpatan liang bertambah dengan masa punaran,
tetapi, masa punaran tiada kesan ketara ke atas saiz dan bentuk liang.
Ukuran AFM mendedahkan bahawa kekasaran permukaan bertambah dengan masa punaran,
bagaimanapun, bagi masa punaran yang lama,
penambahan kekasaran permukaan tidak lagi bermakna. Ukuran OT menunjukkan
bahawa penambahan ketumpatan liang boleh mengurangkan pemancaran
cahaya. Kajian ini menunjukkan bahawa liang boleh mempengaruhi ciri-ciri
struktur dan optik bagi GaN.
Kata kunci: GaN berliang; sifat-sifat struktur; sifat optik
REFERENCES/RUJUKAN
Canham, L. T. 1990.
Silicon quantum wire array fabrication by electrochemical
and chemical dissolution of wafers, Appl.
Phys. Lett.
57: 1046-1048
Fauchet, P.M., Tsybeskov, L., Peng, C., Duttagupta, S. P., Von Behren, J.,
Kostoulas, Y., Vandyshev,
J. M. V. & Hirschman, K.D.1995. Light-emitting
porous silicon: materials science, properties, and device applications, IEEE
J. Sel. Top. Quantum Electron. 1: 1126-1139.
Inoki, C. K., Kuan, T.S., Lee, C.
D., Sagar, A. & Feenstra, R. M. 2002.
Growth of GaN on Porous SiC Substrates by
Plasma-Assisted Molecular Beam Epitaxy,
Mater. Res. Soc. Symp.
Proc. 722: K1.3.1.
Inoki, C. K., Kuan, T.S., Lee, C.
D., Sagar, A., Feenstra,
R. M., Koleske, D. D., Diaz, D. J., Bohn,
P. W. & Adesida, I.
2003. Growth of GaN
on porous SiC and GaN
substrates, J. Electron.
Mater. 32: 855-860.
Li, X., Kim, Y-W., Bohn P. W. & Adesida, I. 2002. In-plane bandgap control
in porous GaN through electroless
wet chemical etching, Appl.
Phys. Lett. 80: 980-982.
Lin, V. S. Y., Motesharei,
K., Dancil, K. P. S., Sailor, M. J. &
Ghadiri, M. R.1997. A Porous Silicon-Based Optical Interferometric
Biosensor, Science
278: 840-843.
Sohn, H., Letant, S., Sailor, M.
J. & Trogler, W. C. 2000. Detection of fluorophosphonate chemical warfare
agents by catalytic hydrolysis with a porous silicon interferometer,
J. Am. Chem. Soc. 122:
5399-5400.
|