Sains Malaysiana 42(2)(2013): 183–186

Si Nanowires Produced by Very High Frequency Plasma Enhanced Chemical

Vapor Deposition (PECVD) via VLS Mechanism

(Kajian Dawai Nano Silikon (SiNW) Dihasilkan dengan Pemendapan Wap Kimia

Peneguh Plasma (PECVD) dengan Kaedah VLS)

Yussof Wahab^1,2, Habib Hamidinezhad^1,3* & Zulkafli Othaman¹

¹Ibnu Sina Institute for Fundamental Science Studies (IIS), Universiti Teknologi Malaysia

81310 Skudai, Johor, Malaysia

²UTM Razak School of Engineering and Advanced Technology, UTM  International Campus

Jalan Semarak, 54100 Kuala Lumpur, Malaysia

³Department of Physics, Faculty of Basic Sciences, University of Mazandaran

Pasdaran Street, Babolsar, 47415 Mazandaran, Iran

Diserahkan: 7 Januari 2012 / Diterima: 21 Mei 2012

ABSTRACT

Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer.

Keywords: PECVD; silicon nanowire; VLS

ABSTRAK

Nanodawai silikon (SiNW) dengan diameter beberapa nanometer dan panjang 3 μm di atas wafer silikon telah dihasilkan dengan menggunakan pemendapan wap kimia peneguh plasma. Pemerhatian mikroskop elektron imbasan (SEM) menunjukkan nanodawai tumbuh secara rawak dan analisis spektrokopi serakan sinar-X menunjukkan nanodawai mengandungi unsur Si, Au dan O. Nanodawai silikon diukur menggunakan mikroskop transmisi elektron resolusi tinggi (HRTEM) dan spektroskopi Raman.  SEM menunjukkan bahawa SiNW adalah seperti jarum dengan diameter berjulat 30 nm di puncak hingga 100 nm di dasar dawai dan mempunyai panjang dalam beberapa mikrometer. Tambahan lagi, HRTEM membuktikan bahawa SiNW mengandungi teras hablur silikon dan lapisan silika amorfus.

Kata kunci: Nanodawai silikon; PECVD; VLS

RUJUKAN

Fan, X.H., Xu, L., Li, C.P., Zheng, Y.F., Lee, C.S. & Lee, S.T. 2001. Effects of ambient pressure on silicon nanowire growth. Chem. Phys. Lett. 334: 229-232.

Griffiths, H., Xu, C., Barrass, T., Cooke, M., Iacopi, F., Vereecken, P. & Esconjauregui, S. 2007. Plasma assisted growth of nanotubes and nanowires. Surf. & Coat. Technol. 201: 9215-9220.

Hamidinezhad, H., Wahab, Y., Othaman, Z. & Ismail, A.K. 2011. Influence of growth time on morphology and structural properties of silicon nanowires grown by VHF-PECVD. J. of Cryst. Growth 332: 7-11.

Hamidinezhad’, H., Wahab, Y. & Othaman, Z. 2011. Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism. J. Mater. Sci. 46: 5085-5089.

Hamidinezhad”, H., Wahab, Y., Othaman, Z. & Ismail, A.K. 2011. Au-catalyzed silicon nanoneedles synthesized from pure silane sas at various RF powers on silicon substrate by VHF-PECVD. Plasmonics 6: 791-796.

Hofmann, S., Ducati, C., Neill, R.J., Piscanec, S., Ferrari, A.C., Geng, J., Dunin- Borkowski, R.E. & Robertson, J. 2003. Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition. Journal of Appl. Phys. 94(9): 6005-6012.

Jasinski, J.M. & Gates, S.M. 1991. Silicon chemical vapor deposition one step at a time: Fundamental studies of silicon hydride chemistry. Acc. of Chem. Res. 24(1): 9-15.

Jeon, M. & Kamisako, K. 2008. Synthesis of silicon nanowires after hydrogen radical treatment. Mater. Lett. 62: 3903-3905.

Jeon, M. & Kamisako, K. 2009. Synthesis of Au-catalyzed silicon nanowires by hydrogen radical-assisted deposition method. Met. Mater. Int. 15(1): 83-87.

Kanemitsu, Y., Uto, H., Masurnoto, Y., Matsumoto, T., Futagi, T. & Mimura, H. 1993. Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites. Phys. Rev. B. 48(4): 2827-2830.

Morales, A.M. & Lieber, C.M. 1998. Alaser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279: 208-211.

Niu, J., Sha, J. & Yang, D. 2004. Silicon nanowires fabricated by thermal evaporation of silicon monoxide. Physica E. 23(1-2): 131-134.

Pei, L.Z., Tang, Y.H., Chen, Y.W., Guo, C., Zhang, W. & Zhang, Y. 2006. Silicon nanowires grown from silicon monoxide under hydrothermal conditions. Journal of Crystal Growth 289: 423-427.

Rosaz, G., Salem, B., Pauc, N., Gentile, P., Potié, A. & Baron, T. 2011. Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires. Microelectronic Engineering 88: 3312-3315.

Wagner, R.S. & Ellis, W.C. 1964. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4(5): 89-90.

Wang, N., Tang, Y.H., Zhang, Y.F., Lee, & Lee, S.T. 1998. Nucleation and growth of Si nanowires from silicon oxide. Phys. Rev. B. 58: 16024-16026.

Wu, Y., Fan, R. & Yang, P. 2002. Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires. Nano. Lett. 2(2): 83-86.

Zhang, Y.F., Tang, Y.H., Wang, N., Yu, D.P., Lee, C.S., Bello, I. & Lee, S.T. 1998. Silicon nanowires prepared by laser ablation at high temperature. Appl. Phys. Lett. 72(15): 1835-1837.

*Pengarang untuk surat-menyurat; email: habib_hamidinezhad@yahoo.com