Sains Malaysiana 51(12)(2022): 4099-4110

http://doi.org/10.17576/jsm-2022-5112-18

Kesan Suhu Rendaman dan Suhu Sepuh Lindap dalam Penyediaan Filem Nipis Bismut Sulfida (Bi₂S₃) terhadap Prestasi Sel Suria Organik Jenis Songsang Berasaskan P3HT: PCBM

(The Effect of Immersion and Annealing Temperatures in the Preparation of Thin Films of Bismuth Sulphide (Bi₂S₃) on the Performance of Inverted Type Organic Solar Cells Based on P3HT: PCBM)

NURUL NADHIRAH BINTI MD RIDZUAN & CHI CHIN YAP^*

Jabatan Fizik Gunaan, Fakulti Sains dan Teknologi, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

Diserahkan: 22 Julai 2022/Diterima: 6 Oktober 2022

Abstrak

Filem nipis bismut sulfida (Bi₂S₃) mempunyai jurang tenaga yang kecil dan boleh dihasilkan dengan mudah pada suhu yang rendah melalui proses pemendapan celupan kimia. Ia adalah bahan yang sesuai untuk digunakan sebagai lapisan pengangkut elektron (ETL) dalam sel suria organik jenis songsang (I-OSC) yang menggantikan zink oksida (ZnO) yang mempunyai jurang jalur tenaga yang besar dan memerlukan suhu sepuh lindap yang tinggi dalam proses penghasilan sel suria berprestasi tinggi. Kajian terdahulu mengenai kesan tempoh rendaman menunjukkan bahawa kecekapan penukaran kuasa (PCE) optimum yang dapat dicapai oleh filem nipis Bi₂S₃ adalah sehingga 2.32% dengan rendaman selama 30 minit dalam larutan Bi₂S₃ pada suhu bilik. Dalam kajian ini, suhu rendaman dan sepuh lindap pada penyediaan filem nipis Bi₂S₃ pula dikaji untuk memerhatikan kesannya terhadap prestasi fotovoltaik I-OSC. Masa rendaman substrat dalam larutan Bi₂S₃ ditetapkan pada tempoh 30 minit tetapi suhu rendaman dibezakan. Hasil kajian menunjukkan suhu rendaman pada suhu bilik masih memberikan PCE tertinggi iaitu 1.79% dengan nilai ketumpatan arus litar pintas (J_sc,), 8.01 mA.cm^-2 dan voltan litar terbuka (V_oc), 0.54 V. Selain itu, bagi suhu sepuh lindap, PCE menurun apabila suhu sepuh lindap yang tinggi dikenakan. Menariknya, apabila suhu sepuh lindap yang tinggi digunakan, kehabluran Bi₂S₃ bertambah baik, tetapi permukaan FTO lebih banyak terdedah kepada P3HT, mengakibatkan kebocoran arus yang tinggi. Kajian ini menunjukkan bahawa sampel yang disediakan pada suhu rendaman dan sepuh lindap yang tinggi tidak menghasilkan prestasi fotovoltaik yang lebih baik.

Kata kunci: Bismut sulfida; lapisan pengangkut elektron; pemendapan celupan kimia; sel suria organik jenis songsang; suhu rendaman

Abstract

Bismuth sulfide (Bi₂S₃) thin film has small energy band gap and can be easily synthesized at low temperature using chemical bath deposition process. It is a suitable material to be used as electron transport layer (ETL) in inverted organic solar cells (I-OSCs) to replace zinc oxide (ZnO) which has large energy band gap and requires high annealing temperature in process to produce high performance solar cells. Previous study on the effect of immersion duration showed that the optimum power conversion efficiency (PCE) that can be achieved by Bi₂S₃ thin film is up to 2.32% with 30 minutes of immersion in Bi₂S₃ solution at room temperature. In this work, immersion and annealing temperatures in preparation of Bi₂S₃ thin film were studied to observe their effects on the photovoltaic performance of I-OSCs. Immersion duration of substrate in Bi₂S₃ solution was fixed at 30 minutes but the immersion temperature was varied. The result showed the immersion temperature at room temperature still gave the highest PCE of 1.79% with short circuit current density (J_sc,) of 8.01 mA.cm^-2 and open circuit voltage (V_oc) of 0.54 V. Besides, for annealing temperature, the PCE decreased when high annealing temperature was applied. Interestingly, as the high annealing temperature was applied, the crystallinity of Bi₂S₃ improved, but more FTO surface was exposed to P3HT, resulting in high leakage current. This study suggests that samples prepared at high immersion and annealing temperature did not result in better photovoltaic performance.

Keywords: Bismuth sulfide; chemical bath deposition; electron transport layer; immersion temperature; inverted organic solar cell

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^*Pengarang untuk surat-menyurat; email: ccyap@ukm.edu.my